Multilayer hBN (Boron Nitride) film grown on copper foil

Multilayer h-BN (Boron Nitride) film grown in copper foil

h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).

During Chemical Vapor Deposition, BN is grown on both sides of the copper foil

TEM image of perfect hexagonal structure

TEM Thin Film

AFM image of multilayer BN on Cu

AFM ML BN

AFM scan of multilayer BN on Cu

AFM Scan

If transferred onto an SiO2 substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.

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Key Features

  • Close to complete coverage (90-95%), with some minor holes
  • Average Thickness of BN film is 13 nm
  • Thickness of the copper foil is 20 microns
  • Quality is confirmed by TEM. TEM shows perfect hexagonal structure
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