Oxide Coated Silicon Wafer

We have both n-type and p-type silicon wafers.
 
• Diameter 100 mm (4")
• Oxide Thickness:285 nm
• Color: Violet
• Wafer thickness: 500 micron
• Resistivity: 0.001-0.005 ohm-cm
• Type/Dopant: P/Boron
• Orientation: <100>
• Front Surface: Polished
• Back Surface: Etched
 
Specification for n -type
 
• Diameter 100 mm (4")
• Oxide Thickness:285 nm
• Color: Violet
• Wafer thickness: 525 micron
• Resistivity: 0.001-0.005 ohm-cm
• Type/Dopant: N/Arsenic
• Orientation: <100>
• Front Surface: Polished
• Back Surface: Etched
 
Various available pack size of silicon wafers are   
• Five Pack: 5 Silicon/Silicon dioxide wafers: 4" Diameter, N-type
• Five Pack: 5 Silicon/Silicon dioxide wafers: 4" Diameter, P-type
• One Silicon/Silicon dioxide (90 nm) wafers: 4" Diameter, P-type
• Silicon/Silicon dioxide wafer: 4" Diameter, N-type
• Silicon/Silicon dioxide wafer: 4" Diameter, P-type
• Wafer Sampler Pack
 
we can also provide customized specification 
Please contact us for any detail specification 

dddq

Key Features

  • Diameter 100 mm
  • Oxide Thickness:285 nm
  • Wafer thickness: 500 micron
  • Resistivity: 0.001-0.005 ohm-cm
  • p type and n-type
  • Orientation: <100>
Softouchwplk Top