• Growth method: CVD synthesis
• Polymer assisted transfer
• Chip dimensions: 10 mm x 10 mm
• Chip thickness: 525 μm
• Number of channels per chip: 30
• Gate oxide thickness (EOT): 20 nm
• Gate oxide material: Al2O3
• Dielectric breakdown: >13kV/mm
• Metallization: Au Contacts
• Graphene field-effect mobility: > 600 cm2/V.s
• Dirac point: < 5 V
• Yield: > 75 %

• Growth method: CVD synthesis
• Polymer assisted transfer
• Chip dimensions: 10 mm x 10 mm
• Chip thickness: 525 μm
• Number of channels per chip: 30
• Gate oxide thickness (EOT): 5 nm
• Gate oxide material: Al2O3
• Dielectric breakdown: >13kV/mm
• Metallization: Au Contacts
• Graphene field-effect mobility: >600 cm2/V.s
• Dirac point: < 5 V
• Yield: > 75 %

• Dimension: 20×30 cm
• Thickness: 25 µm

we offer a wide range of single crystal.

2D SEMICONDUCTORS

2D SUPERCONDUCTORS

2D SEMIMETALS

2D EXCITONIC INSULATORS

2D METALS

2D ALLOYS

In2Se3 crystal:

• a = b = 0.34 nm, c = 18.84 nm, α = β = 90°, γ = 120°
• Material Properties: Semiconducting
• Crystal Structure: Hexagonal
• Growth Method: Float Zone Technique
• Purity: 99.9999%

• Purity: 99.9%
• Particle size: <200 nm

Ultrananotech can provide all kinds of shapes and sizes of high-purity evaporation materials, including pure metal evaporation materials, oxide materials, alloy evaporation materials, and composite materials

• Pure Metal Evaporation Material
• Oxide Evaporation Material
• Compound Evaporation Material
• Alloy Evaporation Material

• Loading: 20 mg/ml
• Packing: 25ml