CVD Graphene Film/CVD h-BN Film Heterostructure on SiO2/Si wafer

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Properties of Silicon/Silicon Dioxide Wafers:

  • Oxide Thickness: 285 nm
  • Color: Violet
  • Wafer thickness: 525 micron
  • Resistivity: 0.001-0.005 ohm-cm
  • Type/Dopant: P/Boron
  • Orientation: <100>
  • Front Surface: Polished
  • Back Surface: Etched
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CVD Graphene Film/CVD h-BN Film Heterostructure on SiO2/Si wafer