Properties of Graphene/h-BN Film:
Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer
Size: 1cmx1cm; 4 pack
The thickness and quality of each film is controlled by Raman Spectroscopy
The coverage of this product is about 98%
The films are continuous, with minor holes and organic residues
High Crystalline Quality
The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)
Sheet Resistance: 430-800 Ω/square Available Size: 1cmx1cm; 4 pack
Graphene/hBN interfaces are used where the graphene needs to be precisely gated, for increased mobility, and for reduced scattering.
h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene.
Using our h-BN on SiO2/Si wafers in conjuction with graphene will encourage you to explore graphene heterostructures for transistor applications
Our graphene/h-BN films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.