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EVAPORATING MATERIALS
1. MgF2-Granules
2. SiO2 -granules
3. Water-repellant Materials-SiO2(WR100)
4. Aluminium Oxide (Al2O3)-Granules
5. Silicon Oxide (SiO)
6. Magnesium Oxide (MgO)
7. Indium Tin Oxide (ITO)
8. Zirconium Oxide (ZrO2)-White
9. Zirconium Oxide (ZrO2)-Black
10. Titanium dioxide (TiO2)-Black
11. Tantalum Penta oxide (Ta2O5)-Black
12. Niobium Penta oxide (Ta2O5)-Black
13. Zinc Sulphide (ZnS)-Black
14. Dititanium oxide (Ti2O3)
15. Chromium ( Cr)
16. Tin Oxide: SnO2
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Description
| 1. MgF2-Granules Purity:4N Melting point(℃): 1266 Production process: Electric smelting Vaporization temperature（℃): 1300-1600 hyaline area（um): 0.2-6 Evaporation source: E.B,Mo Refractive index(n/d): 1.38@0.55um Available Pellet size: 1-3 mm, <1mm, 3-4 mm 2. SiO2 -granules Melting point(℃): 1700 Production process Electric smelting Vaporization temperature（℃): 1800-2200 Hyaline area（um): 0.35-2 Evaporation source: E.B Refractive index(n/d): 1.46@0.55um Pellet: 18*15thick,22*15t, 30*15t 3. Water-repellant Materials-SiO2(WR100) Purity 4N Melting point(℃): 360 Production process:Pressure Molding Vaporization temperature（℃): 360-450 Hyaline area（um): 0.4-0.7 Evaporation source: E.B,Mo Refractive index(n/d): 1.50@0.55um 4. Aluminium Oxide (Al2O3)-Granules Purity: 4N Melting point(℃): 2047 Production process: Crystallization process Vaporization temperature（℃): 2000-2201 Hyaline area（um): 0.2-6 Evaporation source: E.B Refractive index(n/d): 1.63@0.55um Pellet-1-3 micron, 3-5 micron 5. Silicon Oxide (SiO) Purity: 4N Melting point(℃): 1705 Production process: Reactive synthesis Vaporization temperature（℃): 1200-1600 Hyaline area（um): 0.8-8.0 Evaporation source: E.B,Mo Refractive index(n/d): 1.8@1.0um Pellet-1-3 micron, 3-5 micron 6. Magnesium Oxide (MgO) Purity: 4N Melting point(℃): 2640 Production process: Crystallization process Vaporization temperature（℃): 2800-3200 – Evaporation source: E.B Refractive index(n/d): 1.7@0.55um 7. Indium Tin Oxide (ITO) Purity: 4N Melting point(℃） 2000 Production process: Hot pressed Vaporization temperature（℃）: 1900 Hyaline area（um) 0.4-2 Evaporation source: E.B Refractive index(n/d) 2.0@0.55um Pellet: 8*5 8. Zirconium Oxide (ZrO2)-White Purity: 4N Melting Point(℃): 2700 Production process: Hot pressed Vaporization temperature（℃): Around 2400 Hyaline area（um): 0.32-7 Evaporation source: E.B,W Refractive index(n/d): 1.96@0.55um |
9. Zirconium Oxide (ZrO2)-Black Purity: 4N Melting point(℃): 2700 Production process: Hot pressed Vaporization temperature（℃): 2300-2400 Hyaline area（um): 0.32-7 Evaporation source: E.B,W Refractive index(n/d): 1.96@0.55um 10. Titanium dioxide (TiO2)-Black Purity: 4N Melting Point(℃): 1775 Production process: Hot pressed Vaporization temperature（℃): 1800-2000 Hyaline area（um): 0.4-12 Evaporation source: E.B Refractive index(n/d): 2.4@0.55um Pellet: 1-3 micron, 11. Tantalum Penta oxide (Ta2O5)-Black Purity 4N Melting point(℃): 1800 Production process: Hot pressed Vaporization temperature（℃): 1900-2200 hyaline area（um): 0.35-7 Evaporation source: E.B Refractive index(n/d): 2.1@0.55um Form: Pellet 12. Niobium Penta oxide (Ta2O5)-Black Purity 4N Melting point(℃): 1512 Production process: Hot pressed Vaporization temperature（℃): 1900-2200 Hyaline area（um): 0.35-7 Evaporation source: E.B Refractive index(n/d): 2.1@0.55um Form: Pellet 13. Zinc Sulphide (ZnS)-Black Purity: 4N Melting point(℃): 1850 Production process: Hot press Vaporization temperature（℃): 1000-1100 hyaline area（um): 0.4-14 Evaporation source: E.B,Mo Refractive index(n/d): 2.4@0.10um Form: Pellet 14. Dititanium oxide (Ti2O3) Purity: 4N Density: 4.26 Refractive index(n/d): 2.35@500nm Vaporization temperature（℃): 1750-2000 hyaline area（um): 0.4-12um Form: Pellet 15. Chromium ( Cr) Purity: 4N Melting point(℃): 1430 Density 7.14 Form: Pellet 16. Tin Oxide: SnO2 Purity: 4N Melting point(℃): 1630 Density: 7.14 Form: Pellet |
Additional information
| Single Crystal Silicon Wafer | N-type, Dia: 1 inch, Undoped, Dia: 2 inch |
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