Germanium Selenide (GeSe)

GeSe is a semiconductor with an indirect band gap ~1.1 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Germanium Selenide belongs to the group-VI transition metal monochalcogenides.

The GeSe crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.