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Germanium sulfide (GeS)
GeS crystal properties
Crystal size: ~10 mm
Electrical properties: Semiconductor
Crystal structure: Orthorhombic
Unit cell parameters: a = 1.450, b = 0.364 nm, c = 0.430 nm, α = β = γ = 90°
Type: Synthetic
Purity: >99.995 %
Characterized by: XRD, Raman, EDX
Description
GeS is a semiconductor with an indirect band gap of 1.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. GeS belongs to the group-14 transition metal monochalcogenides.
The GeS crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, are rectangular shaped and have a metallic appearance.
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