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Processed in Clean Room Class 1000
Our monolayer graphene on SiO₂/Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO₂/Si (300nm) by a wet transfer process. We consider it to be a benchmark product in the graphene market – not only for its excellent quality, but also for its shape, size and number of applications.”
Description
GRAPHENE FILM:
• Growth method: CVD synthesis
• Appearance (color): Transparent
• Transparency: > 97%
• Coverage: > 95%
• Number of graphene layers: 1
• Thickness (theoretical): 0.345 nm
• FET Electron Mobility on Al2O3 passivated SiO2/Si: 6900 cm2 /Vs (doi: http://dx.doi.org/10.1063/1.4972847)
• FET Electron Mobility on SiO₂/Si: 3760 cm2/Vs DOI: https://doi.org/10.1103/PhysRevLett.119.066802
• Sheet Resistance on SiO₂/Si: 450±40 Ohms/sq (1cm x1cm)
• Grain size: Up to 20 μm
Available Sizes:
• 4” Wafer
• 10 mm x 10 mm – Pack of 4
• 10 mm x 10 mm
• 1 inch x 1 inch
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