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h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Average Thickness of BN film is 13 nm
Thickness of the copper foil is 20 microns
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
Description
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Average Thickness of BN film is 13 nm
Thickness of the copper foil is 20 microns
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
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