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Multilayer h-BN (Boron Nitride) film grown in copper foil
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Average Thickness of BN film is 13 nm
Thickness of the copper foil is 20 microns
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
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h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
Close to complete coverage (90-95%), with some minor holes
Average Thickness of BN film is 13 nm
Thickness of the copper foil is 20 microns
Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
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