Single Crystal Silicon-Silicon dioxide Wafer P-Type (4 inch)

Single Crystal Silicon / Silicon Oxide, Wafer Diameter : 4 inch; Diameter100 mm(4 inch)

• Oxide Thickness:100 nm ( dry)
• Color: Violet
• Oxide Thickness: 285 nm ( dry)
• Wafer thickness:525 micron
• Resistivity:0.001-0.005ohm-cm
• Type/Dopant: P
• Orientation: <100>

**Provided in single wafer box