2,900

Single Crystal Silicon-Silicon dioxide Wafer N type (2 inch)

• Diameter: 50.8+- 0.2 mm (2 inch)
• Oxide Thickness: 300 nm ( dry)
• Resistivity: (0.001-0.005 Ohm/sq).
• Thickness: 500 µm
• AS doped
• Orientation: <100>+- 0.5
• Single side polished

**Provided in single wafer box