Single Crystal Silicon-Silicon dioxide Wafer N type ( 4 inch)

Single Crystal Silicon-Silicon dioxide Wafer N type ( 4 inch)

• Dia: 100 mm(4 inches)
• Type/Dopant: N
• Orientation:<100>
• Wafer thickness: 500 micro meter
• Resistivity: <0.01
• Front Side Polished
• Back Side Etched
• SiO2 Oxide Thickness: 300 nm (dry)

**Provided in single wafer box