- Si/SiO2 Wafer
- Dia: 100 mm(4 inches)
- Type/Dopant: N
- Orientation:<100>
- Wafer thickness: 500 micro meter
- Resistivity: <0.01
- Front Side Polished
- Back Side Etched
- SiO2 Oxide Thickness: 300 nm (dry)
**Provided in single wafer box
₹5,800
Single Crystal Silicon-Silicon dioxide Wafer N type ( 4 inch)
**Provided in single wafer box