5,500.00

Single Crystal Silicon-Silicon dioxide Wafer N type ( 4 inch)

  • Si/SiO2 Wafer
  • Dia: 100 mm(4 inches)
  • Type/Dopant: N
  • Orientation:<100>
  • Wafer thickness: 500 micro meter
  • Resistivity: <0.01
  • Front Side Polished
  • Back Side Etched
  • SiO2 Oxide Thickness: 300 nm (dry)

**Provided in single wafer box