Single Crystal Silicon-Silicon dioxide Wafer P type ( 4 inch)

• Diameter100 mm(4″)
• Oxide Thickness:100 nm ( dry)
• Color: Violet
• Wafer thickness:525 micron
• Resistivity:0.001-0.005ohm-cm
• Type/Dopant: P
• Orientation:          <100>

**Provided in single wafer case