Single Crystal Silicon-Silicon dioxide Wafer P type ( 4 inch)

Single Crystal Silicon-Silicon dioxide Wafer P type ( 4 inch)

• Diameter100 mm +-0.2 mm(4″)
• Oxide Thickness:300 ±20 nm ( dry)
• Color: Violet
• Wafer thickness:500 ± 20 micron
• Resistivity:1-10 ohm-cm
• Type/Dopant: P
• Orientation:          <100>

**Provided in single wafer case