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In2Se3
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In2Se3 crystal:
- a = b = 0.34 nm, c = 18.84 nm, α = β = 90°, γ = 120°
- Material Properties: Semiconducting
- Crystal Structure: Hexagonal
- Growth Method: Float Zone Technique
- Purity: 99.9999%
In2Se3 crystal:
- a = b = 0.34 nm, c = 18.84 nm, α = β = 90°, γ = 120°
- Material Properties: Semiconducting
- Crystal Structure: Hexagonal
- Growth Method: Float Zone Technique
- Purity: 99.9999%
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