GaN single crystal substrate/wafer

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C-plane <0001> ± 0.5º
Available size: 5×5.5, 10×10.5, 14×15, 50.8mm & 100mm diameter
Available orientation: c-plane <0001>
Primary Orientation flat: <1-100> ± 0.5°, 16mm(2-inch) / 30mm(4-inch)
Second Orientation flat: <11-20> ± 3°, 8mm(2-inch) / 15mm(4-inch)
Polishing: Ga-face surface roughness: Ra <0.3nm (Epitaxy-ready)
N-face surface roughness: Ra 0.5 ~1.5 μm (optional: Ra <0.3 nm (polished))

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Categories: Electro-optical Crystals, Shop, Single Crystal, Single crystal substrates Tags: #crystallography, #electronic properties, #Epitaxial growth, #materials science, #paramagnetic, #Semiconductor, #semiconductor materials

Description

C-plane <0001> ± 0.5º
Available size: 5×5.5, 10×10.5, 14×15, 50.8mm & 100mm diameter
Available orientation: c-plane <0001>
Primary Orientation flat: <1-100> ± 0.5°, 16mm(2-inch) / 30mm(4-inch)
Second Orientation flat: <11-20> ± 3°, 8mm(2-inch) / 15mm(4-inch)
Polishing: Ga-face surface roughness: Ra <0.3nm (Epitaxy-ready)
N-face surface roughness: Ra 0.5 ~1.5 μm (optional: Ra <0.3 nm (polished))