GFET-S31 for Sensing applications

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Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 525 μm
Number of channels per chip: 30
Gate oxide thickness (EOT): 20 nm
Gate oxide material: Al2O3
Dielectric breakdown: >13kV/mm
Metallization: Au Contacts
Graphene field-effect mobility: > 600 cm2/V.s
Dirac point: < 5 V
Yield: > 75 %

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Categories: Patterned Electrodes, Sensing Device, Shop Tags: #Biosensors, #Field-EffectTransistors, #hyperacusis, #Lab-on-a-chipsystems, #Microfluidics, #Nanotechnology, #remotesensing, #Sensingapplications, #Sensitivity

Description

Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 525 μm
Number of channels per chip: 30
Gate oxide thickness (EOT): 20 nm
Gate oxide material: Al2O3
Dielectric breakdown: >13kV/mm
Metallization: Au Contacts
Graphene field-effect mobility: > 600 cm2/V.s
Dirac point: < 5 V
Yield: > 75 %