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Indium arsenide doped Tin, Single Crystal substrate
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- Dopant Tin, N-Type
- Carrier Concentration (cm-3): (5-20) x 1017
- Mobility (cm2/V.s): >2000
- Dislocation density (cm-2): <5×104
- Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
- Available orientation: <111> or <100>
- Surface: single side polished, double side polished
- Dopant Tin, N-Type
- Carrier Concentration (cm-3): (5-20) x 1017
- Mobility (cm2/V.s): >2000
- Dislocation density (cm-2): <5×104
- Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
- Available orientation: <111> or <100>
- Surface: single side polished, double side polished
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