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Gallium antimony Te doped substrate
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- Te doped, N-type
- Carrier concentration (cm-3): (1~20) x 1017
- Mobility (cm2/V.s): 200-500
- Dislocation density (cm-2): 《3000
- Available size: 10x5mm, 10x10mm, 20x20mm, 2″ dia., 3″ dia. 4″ dia. + others
- Available orientation: <100>, <111> ±0.5º,
- Surface: single side polished, double side polished
- TTV: <10um
- Bow: <10um
- Warp: <15um
- Te doped, N-type
- Carrier concentration (cm-3): (1~20) x 1017
- Mobility (cm2/V.s): 200-500
- Dislocation density (cm-2): 《3000
- Available size: 10x5mm, 10x10mm, 20x20mm, 2″ dia., 3″ dia. 4″ dia. + others
- Available orientation: <100>, <111> ±0.5º,
- Surface: single side polished, double side polished
- TTV: <10um
- Bow: <10um
- Warp: <15um
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