Gallium antimony Zn doped substrate

$0.00

  • Zn doped, P-type
  • Carrier concentration (cm-3): (5~100) x 1017
  • Mobility (cm2/V.s): 200-500
  • Dislocation density (cm-2): 《3000
  • Available size: 10x5mm, 10x10mm, 20x20mm, 2″ dia. , 3″ dia. 4″ dia. + others
  • Available orientation: <100>, <111> ±0.5º,
  • Surface: single side polished, double side polished
  • TTV: <10um
  • Bow: <10um
  • Warp: <15um
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Gallium antimony Zn doped substrate

$0.00