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Gallium antimony Zn doped substrate

Gallium antimony Zn doped substrate

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Zn doped, P-type
Carrier concentration (cm-3): (5~100) x 1017
Mobility (cm2/V.s): 200-500
Dislocation density (cm-2): 《3000
Available size: 10x5mm, 10x10mm, 20x20mm, 2″ dia. , 3″ dia. 4″ dia. + others
Available orientation: <100>, <111> ±0.5º,
Surface: single side polished, double side polished
TTV: <10um
Bow: <10um
Warp: <15um

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Categories: Group III-V, Shop, Single Crystal, Single crystal substrates

Description

Zn doped, P-type
Carrier concentration (cm-3): (5~100) x 1017
Mobility (cm2/V.s): 200-500
Dislocation density (cm-2): 《3000
Available size: 10x5mm, 10x10mm, 20x20mm, 2″ dia. , 3″ dia. 4″ dia. + others
Available orientation: <100>, <111> ±0.5º,
Surface: single side polished, double side polished
TTV: <10um
Bow: <10um
Warp: <15um