GFET-S10 for Sensing applications

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TYPICAL SPECIFICATIONS

  • GFET-S10 (Die size 10 mm x 10 mm)
  • Processed in Clean Room Class 1000
  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 36
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
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