PROCESSING SPECIFICATIONS:
• Transparency: > 97 %
• Coverage: > 95%
• Thickness (theoretical): 0.345 nm
• Hall Electron Mobility on Si3N4: 1432±428 cm2/Vs
• Sheet Resistance: 576±172 Ohms/sq (1cm x1cm)
• Grain size: Up to 20 μm
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Monolayer Graphene film on Si3N4 (10 mm x 10 mm) – Processed in Clean Room Class 1000
Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si3N4 substrate using wet transfer process.
This product is ideal for R&D departments and universities.”
PROCESSING SPECIFICATIONS:
• Transparency: > 97 %
• Coverage: > 95%
• Thickness (theoretical): 0.345 nm
• Hall Electron Mobility on Si3N4: 1432±428 cm2/Vs
• Sheet Resistance: 576±172 Ohms/sq (1cm x1cm)
• Grain size: Up to 20 μm
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