GFET-S11 for Sensing applications

$0.00

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 31
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %
Call for price Download TDS
GFET-S11 for Sensing applications

$0.00