GFET-S12 for Sensing applications

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Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %

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Categories: Patterned Electrodes, Sensing Device, Shop Tags: #Biosensors, #Field-EffectTransistors, #hyperacusis, #Lab-on-a-chipsystems, #Microfluidics, #nanoscale, #Nanotechnology, #remotesensing, #Sensingapplications, #Sensitivity

Description

Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %