TYPICAL SPECIFICATIONS
· Growth method: CVD synthesis
· Chip dimensions: 10 mm x 10 mm
· Chip thickness: 675 μm
· Number of GFETs per chip: 36
· Gate oxide thickness: 90 nm
· Gate oxide material: SiO2
· Resistivity of substrate: 1-10 Ω.cm
· Metallization: Chromium/Gold-Palladium 5/50 nm
· Graphene field-effect mobility: >1000 cm2/V.s
· Encapsulation: 60-120 nm Al 2 O 3 + 100 nm Si 3 N 4
· Dirac point: >50 V
· Minimum working devices: >75 %”
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“GFET-S20 (Die size 10 mm x 10 mm)
Processed in Clean Room Class 1000
The GFET S-20 chip from Graphenea is designed for measurements in liquid medium. The new version provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.”
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