- Diameter100 mm (4″)
- Silicon Oxide Wafer
- Oxide Thickness:300 nm ( dry)
- Wafer thickness:500 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: N
- Orientation: <100>
Silicon Dioxide wafer 4 inch
$103.71
- Diameter100 mm (4″)
- Silicon Oxide Wafer
- Oxide Thickness:300 nm ( dry)
- Wafer thickness:500 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: N
- Orientation: <100>
Out of stock
Categories: Shop, Silicon Dioxide Wafer, SiO2-N Type
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