CVD Graphene Film/CVD h-BN Film Heterostructure on SiO2/Si wafer

• Size: 1cmx1cm;
• The thickness and quality of each film is controlled by Raman Spectroscopy
• The coverage of this product is about 98%
• The films are continuous, with minor holes and organic residues
• High Crystalline Quality
• The graphene film is predominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)
• Sheet Resistance: 430-800 Ω/square

Properties of Silicon/Silicon Dioxide Wafers:

• Oxide Thickness: 285 nm
• Color: Violet
• Wafer thickness: 525 micron
• Resistivity: 0.001-0.005 ohm-cm
• Type/Dopant: P/Boron
• Orientation: <100>
• Front Surface: Polished
• Back Surface: Etched