Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

$110.88

Si/SiO2 Wafer
Dia: 100 mm(4 inches)
Orientation:<100>
Wafer thickness: 500 micro meter
Resistivity: <0.01
Front Side Polished
SiO2 Oxide Thickness: 300 nm (dry)

**Provided in Single wafer case**

SKU: SiO4P-Aa Category: SiO2-P Type Tags: #Integratedcircuits, #Microprocessors, #Ptype, #Semiconductor, #Silicondioxide, #siliconwafer, #Solarcells, #Waferfabrication

Description

Si/SiO2 Wafer
Dia: 100 mm(4 inches)
Orientation:<100>
Wafer thickness: 500 micro meter
Resistivity: <0.01
Front Side Polished
SiO2 Oxide Thickness: 300 nm (dry)