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GFET-S21P for Sensing applications
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- Growth method: CVD synthesis
- Polymer assisted transfer
- Chip dimensions: 10 mm x 10 mm
- Chip thickness: 525 μm
- Number of GFETs per chip: 1 (12 in parallel)
- Gate oxide thickness: 90 nm
- Gate oxide material: SiO2
- Resistivity of substrate: 1-10 Ω.cm
- Metallization: Au contacts
- Encapsulation: ≈200 nm glutarimide-based
- Graphene field-effect mobility: >1000 cm2/V.s
- Dirac point (liquid gating): <1V
- Minimum working devices: >75 %
- Growth method: CVD synthesis
- Polymer assisted transfer
- Chip dimensions: 10 mm x 10 mm
- Chip thickness: 525 μm
- Number of GFETs per chip: 1 (12 in parallel)
- Gate oxide thickness: 90 nm
- Gate oxide material: SiO2
- Resistivity of substrate: 1-10 Ω.cm
- Metallization: Au contacts
- Encapsulation: ≈200 nm glutarimide-based
- Graphene field-effect mobility: >1000 cm2/V.s
- Dirac point (liquid gating): <1V
- Minimum working devices: >75 %
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