GFET-S22 for Sensing applications

Call for Price

Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 12 in parallel
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Encapsulation: 50 nm Al2O3
Dirac point (liquid gating): <1V
Minimum working devices: >75 %

Call for price Download TDS

Categories: Patterned Electrodes, Sensing Device, Shop Tags: #Biosensors, #electricaldetection, #Field-EffectTransistors, #Lab-on-a-chipsystems, #Microfluidics, #Nanotechnology, #remotesensing, #Sensingapplications, #Sensitivity

Description

Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 12 in parallel
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Encapsulation: 50 nm Al2O3
Dirac point (liquid gating): <1V
Minimum working devices: >75 %