GFET-S22P for Sensing applications

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  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 525 μm
  • Number of GFETs per chip: 12 in parallel
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Encapsulation:≈200 nm glutarimide-based
  • Dirac point (liquid gating): <1V
  • Minimum working devices: >75 %
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