Indium arsenide doped Zinc, Single Crystal substrate

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Dopant Zinc, P-Type
Carrier Concentration (cm-3): (1-20) x 1017
Mobility (cm2/V.s): 100-300
Dislocation density (cm-2): <5×104
Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
Available orientation: <111> or <100>
Surface: single side polished, double side polished

Dopant Zinc, P-Type
Carrier Concentration (cm-3): (1-20) x 1017
Mobility (cm2/V.s): 100-300
Dislocation density (cm-2): <5×104
Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
Available orientation: <111> or <100>
Surface: single side polished, double side polished