- Dopant un-doped, N-Type
- Carrier Concentration (cm-3): 5 x 1016
- Mobility (cm2/V.s): 2 x 104
- Dislocation density (cm-2): <5×104
- Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
- Available orientation: <111> or <100>
- Surface: single side polished, double side polished
Indium arsenide, Single Crystal substrate
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- Dopant un-doped, N-Type
- Carrier Concentration (cm-3): 5 x 1016
- Mobility (cm2/V.s): 2 x 104
- Dislocation density (cm-2): <5×104
- Available size: 10x5mm, 10x10mm, 50.8mm dia. 76.2mm dia., 101.6mm dia. + other sizes
- Available orientation: <111> or <100>
- Surface: single side polished, double side polished