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Silicon dioxide wafer 4 inch
$104.04
- Diameter100 mm(4″)
- Oxide Thickness: 300 nm ( dry)
- Wafer thickness:500 micron
- Resistivity: 1-10 ohm-cm
- Type/Dopant: P
- Orientation: <100>,
- Back side etched
- Diameter100 mm(4″)
- Oxide Thickness: 300 nm ( dry)
- Wafer thickness:500 micron
- Resistivity: 1-10 ohm-cm
- Type/Dopant: P
- Orientation: <100>,
- Back side etched
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