Silicon dioxide wafer P type- 4 inch

$77.86

  • Diameter100 mm(4″)
  • Oxide Thickness:100 nm ( dry)
  • Wafer thickness:525 micron
  • Resistivity:0.001-0.005ohm-cm
  • Type/Dopant: P ( boron doped)
  • Orientation: <100>

**Provided in Single wafer case**

Silicon dioxide wafer P type- 4 inch
Silicon dioxide wafer P type- 4 inch

$77.86