Silicon Dioxide wafer 4 inch

$78.16

  • Diameter100 mm(4″)
  • Oxide Thickness: 300 nm ( dry)
  • Wafer thickness:500 micron
  • Resistivity:0.001-0.005ohm-cm
  • Type/Dopant: P
  • Orientation: <100>,
  • Back side etched
Silicon dioxide wafer N type- 3 inch
Silicon Dioxide wafer 4 inch

$78.16