- Si/SiO2 Wafer
- Type: N
- Dia: 100 mm(4 inches)
- Orientation:<100>
- Wafer thickness: 500 micro meter
- Resistivity: <0.01
- Front Side Polished
- SiO2 Oxide Thickness: 300 nm (dry)
Silicon dioxide wafer N type- 4 inch
$86.55
- Si/SiO2 Wafer
- Type: N
- Dia: 100 mm(4 inches)
- Orientation:<100>
- Wafer thickness: 500 micro meter
- Resistivity: <0.01
- Front Side Polished
- SiO2 Oxide Thickness: 300 nm (dry)
**Provided in Single wafer case**