mGFET-4D for Sensing applications

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Growth method: CVD synthesis

Polymer assisted transfer
Die dimensions: 4 mm x 4 mm
Chip thickness: 525 μm
Number of channels per chip: 28
Gate Oxide thickness: 90 nm
Gate Oxide material: SiO2
Resistivity of substrate: 1-10 Ω·cm
Metallization: Au contacts
Encapsulation: 50 nm Al2O3
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point (liquid gating in PBS): <1 V
Yield: >75 %

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Categories: Patterned Electrodes, Sensing Device, Shop Tags: #GrapheneField-EffectTransistor, #Leadlesschipcarrier (LCC), #Liquidmedium, #Metalpads, #mGFET-4D, #Non-encapsulatedelectrode, #Parasiticsreduction, #Passivated, #Sensingapplications, #Signal-to-noise ratio

Description

Growth method: CVD synthesis

Polymer assisted transfer
Die dimensions: 4 mm x 4 mm
Chip thickness: 525 μm
Number of channels per chip: 28
Gate Oxide thickness: 90 nm
Gate Oxide material: SiO2
Resistivity of substrate: 1-10 Ω·cm
Metallization: Au contacts
Encapsulation: 50 nm Al2O3
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point (liquid gating in PBS): <1 V
Yield: >75 %