mGFET-4D for Sensing applications

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Growth method: CVD synthesis

  • Polymer assisted transfer
  • Die dimensions: 4 mm x 4 mm
  • Chip thickness: 525 μm
  • Number of channels per chip: 28
  • Gate Oxide thickness: 90 nm
  • Gate Oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω·cm
  • Metallization: Au contacts
  • Encapsulation: 50 nm Al2O3
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point (liquid gating in PBS): <1 V
  • Yield: >75 %
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mGFET-4D for Sensing applications

$0.00