Silicon dioxide wafer N type- 4 inch

Silicon dioxide wafer N type- 4 inch

Silicon dioxide wafer N type- 4 inch

Silicon dioxide wafer N type- 4 inch

Silicon dioxide wafer N type- 4 inch

$104.27

Silicon Oxide Wafer
Diameter100 mm (4″)
Oxide Thickness:100 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: N
Orientation: <100>

**Provided in Single wafer case**

SKU: SiO4N-Ab Category: SiO2-N Type Tags: #Integratedcircuits, #MemoryChips, #Microprocessors, #Semiconductor, #Silicondioxide, #Solarcells, #Substrate, #Waferfabrication

Description

Silicon Oxide Wafer
Diameter100 mm (4″)
Oxide Thickness:100 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: N
Orientation: <100>

Silicon dioxide wafer N type- 4 inch

Silicon dioxide wafer N type- 4 inch