Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

$104.27

Diameter100 mm(4″)
Oxide Thickness:100 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: P ( boron doped)
Orientation: <100>

**Provided in Single wafer case**

SKU: SiO4P-Ab Category: SiO2-P Type Tags: #Integratedcircuits, #MemoryChips, #Microprocessors, #Ptype, #Semiconductor, #Silicondioxide, #Singlecrystal, #Solarcells, #Waferfabrication

Description

Diameter100 mm(4″)
Oxide Thickness:100 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: P ( boron doped)
Orientation: <100>

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch