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Silicon dioxide wafer P type- 4 inch
$103.71
- Diameter100 mm(4″)
- Oxide Thickness: 285 nm ( dry)
- Wafer thickness:525 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: P
- Orientation: <100>
**Provided in Single wafer case**
- Diameter100 mm(4″)
- Oxide Thickness: 285 nm ( dry)
- Wafer thickness:525 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: P
- Orientation: <100>
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