Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch

$106.95

Diameter100 mm(4″)
Oxide Thickness: 285 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: P
Orientation: <100>

**Provided in Single wafer case**

SKU: SiO4P-Ac Category: SiO2-P Type Tags: #CMOStechnology, #Integratedcircuits, #MemoryChips, #Microprocessors, #Semiconductor, #Silicondioxide, #Solarcells, #Substrate, #Wafer

Description

Diameter100 mm(4″)
Oxide Thickness: 285 nm ( dry)
Wafer thickness:525 micron
Resistivity:0.001-0.005ohm-cm
Type/Dopant: P
Orientation: <100>

Silicon dioxide wafer P type- 4 inch

Silicon dioxide wafer P type- 4 inch