- Diameter100 mm(4″)
- Oxide Thickness: 285 nm ( dry)
- Wafer thickness:525 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: P
- Orientation: <100>
Silicon dioxide wafer P type- 4 inch
$104.60
- Diameter100 mm(4″)
- Oxide Thickness: 285 nm ( dry)
- Wafer thickness:525 micron
- Resistivity:0.001-0.005ohm-cm
- Type/Dopant: P
- Orientation: <100>
**Provided in Single wafer case**
SKU: SiO4P-Ac
Category: SiO2-P Type
Tags: #CMOStechnology, #Integratedcircuits, #MemoryChips, #Microprocessors, #Semiconductor, #Silicondioxide, #Solarcells, #Substrate, #Wafer
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