Monolayer Graphene on 285 nm SiO2 Wafer

• The thickness and quality of our graphene films is controlled by Raman Spectroscopy.
• The graphene coverage of this product is about 95%
• The graphene film is continuous, with occasional holes and cracks
• Organic and PMMA residues can be observed
• The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
• Sheet Resistance: 660-1,500 Ω/square

Properties of Silicon/Silicon Dioxide Wafers:

• Oxide Thickness: 285 nm
• Color: Violet
• Wafer thickness: 525 micron
• Resistivity: 0.001-0.005 Ω⋅cm
• Type/Dopant: P/Boron
• Orientation: <100>
• Front Surface: Polished
• Back Surface: Etched
• RCA cleaned